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HiSeC?
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MICROWIRE?
POP?
PowerTrench ?
QFET?
QS?
Quiet Series?
SuperSOT?-3
SuperSOT?-6
SuperSOT?-8
SyncFET?
TinyLogic?
UHC?
VCX?
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PRODUCT STATUS DEFINITIONS
Definition of Terms
2. A critical component is any component of a life
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be reasonably expected to cause the failure of the life
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Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
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The datasheet is printed for reference information only.
Rev. D
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相关PDF资料
NDS9400A MOSFET P-CH 30V 3.4A 8-SOIC
NDS9407 MOSFET P-CH 60V 3A 8-SOIC
NDS9945 MOSFET 2N-CH 60V 3.5A 8-SOIC
NDS9948 MOSFET 2P-CH 60V 2.3A 8-SOIC
NDS9952A MOSFET N+P 30V 2.9A 8-SOIC
NDT014L MOSFET N-CH 60V 2.8A SOT-223
NDT014 MOSFET N-CH 60V 2.7A SOT-223-4
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相关代理商/技术参数
NDS8947 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP LOGIC SO-8
NDS8947_Q 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8958 功能描述:MOSFET Dual N/P Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8958 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SO-8
NDS8958_Q 功能描述:MOSFET Dual N/P Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8961 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8961_F011 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8963 制造商:NSC 制造商全称:National Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor